High Power LED Thermal and Stress Simulation on Copper Slug

Author

Vairavan, Rajendaran ; Sauli, Zaliman ; Retnasamy, Vithyacharan ; Ismail, R.C. ; Nor, N.I.M. ; Nadzri, N.S. ; Kamarudin, H.

Author_Institution

Sch. of Microelectron. Eng., Univ. Malaysia Perlis (UniMAP), Arau, Malaysia

fYear

2013

fDate

10-12 April 2013

Firstpage

294

Lastpage

298

Abstract

High power LED are captivating attention due to its cogent impacts on lighting industry in terms of efficacy, low power consumption, long lifetime and miniature physical size. Nonetheless, the efficiency and reliability of the LED is signified by the junction temperature. This work demonstrates the thermal and stress simulation of single chip LED package with 1mm x1mm x 1mm copper heat slug. The simulation was performed using Ansys version 11. The GaN LED chip was powered with input power of 0.1 W and 1 W. The simulation outcome exhibited that at the maximum junction temperature and stress of the LED chip were 115.81°C and 221.56MPa correspondingly for input power of 1W.

Keywords

III-V semiconductors; copper; electronics packaging; gallium compounds; light emitting diodes; semiconductor device reliability; wide band gap semiconductors; Ansys version 11; Cu; GaN; GaN LED chip; cogent impacts; copper slug; high power LED; junction temperature; lighting industry; low power consumption; reliability; single chip LED package; stress simulation; thermal simulation; Heat sinks; Heating; Junctions; Light emitting diodes; Materials; Stress; Three-dimensional displays; single GaN chip LED;copper heat slug; junction temperature; ansys;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Modelling and Simulation (UKSim), 2013 UKSim 15th International Conference on

Conference_Location

Cambridge

Print_ISBN

978-1-4673-6421-8

Type

conf

DOI

10.1109/UKSim.2013.150

Filename

6527431