Title :
A Novel Analytical Model for Analysis of Delay and Crosstalk in Non Linear RLC Interconnects for Ultra Low Power Applications
Author :
Ravindra, J.V.R. ; Yagateela, P. ; Prasad, Narayan
Author_Institution :
Vardhaman Coll. of Eng., Hyderabad, India
Abstract :
On-chip inductive effects are becoming predominant in Ultra deep submicron (UDSM) interconnects due to increasing clock speeds and decreasing interconnect lengths. Inductance causes noise in the signal waveforms, which can adversely affect the performance of the circuit and signal integrity. This paper proposes a novel analytical Transmission-Line Modeling (TLM) approach to derive delay and crosstalk in the transform domain. A closed form expressions for delay and crosstalk are obtained by incorporating initial conditions using TLM approach for full wave RLC interconnects which are much suitable for ultra deep submicron. Simulation results show that the effect of inductive coupling for long interconnects is significant but is almost negligible for local interconnects. Also, the analytical model response agrees very well that obtained with SPICE. Experiments have been carried out using TSMC 65nm technology node using Cadence´s Dynamic Circuit Simulator SPECTRE.
Keywords :
circuit simulation; crosstalk; integrated circuit interconnections; low-power electronics; transmission line theory; SPECTRE; SPICE; TLM; TSMC technology; UDSM interconnects; cadence dynamic circuit simulator; clock speeds; crosstalk analysis; delay analysis; inductive coupling; interconnect lengths; nonlinear RLC interconnects; on-chip inductive effects; signal waveforms; size 65 nm; transmission-line modeling; ultra deep submicron interconnects; ultra low power applications; Analytical models; Computational modeling; Crosstalk; Delays; Integrated circuit interconnections; Integrated circuit modeling; Power transmission lines; Deep Submicron Technology; RLC Interconnects; Transmission lines; VLSI;
Conference_Titel :
Computer Modelling and Simulation (UKSim), 2013 UKSim 15th International Conference on
Conference_Location :
Cambridge
Print_ISBN :
978-1-4673-6421-8
DOI :
10.1109/UKSim.2013.143