Title :
Low noise high frequency CNTFET amplifier
Author :
Makni, W. ; Barrage, I. ; Samet, Haidar ; Masmoudi, Malek ; Najari, M.
Author_Institution :
Nat. Sch. of Eng. of Sfax, Lab. of Micro-Electro Thermal Syst. (METS), Sfax, Tunisia
Abstract :
This paper focuses on performance challenges related to Mos-based systems operating on high frequency ranges. One solution for this issue is to use carbon nanotube transistor (CNTFET) because of their promising performances. Therefore, to improve the device performance at high frequency ranges, designers must reduce the parasitic capacitances by using an array of parallel nanotubes as the transistor channel. This work presents the simulation of low noise amplifier using CNTFET technology. At 165GHz, the LNA simulation results show a power gain of 16dB, a noise figure of 0.25dB and very low power consumption equal to 0.47mW.
Keywords :
capacitance; carbon nanotube field effect transistors; low noise amplifiers; millimetre wave amplifiers; tunnel transistors; LNA simulation; Mos-based systems; carbon nanotube transistor; frequency 165 GHz; high frequency ranges; low noise high frequency CNTFET amplifier; parallel nanotubes array; parasitic capacitances; power gain; transistor channel; very low power consumption; Decision support systems; Diffusion tensor imaging; Nanoscale devices; CNTFET; LNA; gain; high frequency; noise figure; power consumption;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4673-6039-5
Electronic_ISBN :
978-1-4673-6038-8
DOI :
10.1109/DTIS.2013.6527776
