Design considerations to enhance the modulation efficiency and cutoff frequency of AlGaN/InGaN/GaN HEMTs

Author

Gatabi, I.R. ; Johnson, D.W. ; Jung Hwan Woo ; Babb, M.E. ; Harris, H.R.

Author_Institution

Electr. & Comput. Eng. Dept., Texas A&M Univ., College Station, TX, USA

fYear

2013

fDate

26-28 March 2013

Firstpage

62

Lastpage

67

Abstract

This paper investigates the optimization of design parameters to achieve enhanced modulation efficiency and cutoff frequency in AlGaN/InGaN/GaN HEMTs. The frequency dependent current gain of the device is simulated for different AlGaN thicknesses, taking into account the polarization fields and strain effects. The implementation of an underlap junction is discussed and it is demonstrated that the underlap improves the channel velocity so that current gain cutoff frequency-gate length product of 19.45 GHz-μm can be realized.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; wide band gap semiconductors; AlGaN-InGaN-GaN; HEMT; channel velocity; frequency dependent current gain; modulation efficiency; polarization fields; strain effects; underlap junction; Conferences; Decision support systems; Diffusion tensor imaging; Nanoscale devices; Aluminum Gallium Nitride; Cutoff Frequency; Gallium Nitride; Modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on

Conference_Location

Abu Dhabi

Print_ISBN

978-1-4673-6039-5

Electronic_ISBN

978-1-4673-6038-8

Type

conf

DOI

10.1109/DTIS.2013.6527779

Filename

6527779