Title :
Design considerations to enhance the modulation efficiency and cutoff frequency of AlGaN/InGaN/GaN HEMTs
Author :
Gatabi, I.R. ; Johnson, D.W. ; Jung Hwan Woo ; Babb, M.E. ; Harris, H.R.
Author_Institution :
Electr. & Comput. Eng. Dept., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper investigates the optimization of design parameters to achieve enhanced modulation efficiency and cutoff frequency in AlGaN/InGaN/GaN HEMTs. The frequency dependent current gain of the device is simulated for different AlGaN thicknesses, taking into account the polarization fields and strain effects. The implementation of an underlap junction is discussed and it is demonstrated that the underlap improves the channel velocity so that current gain cutoff frequency-gate length product of 19.45 GHz-μm can be realized.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; wide band gap semiconductors; AlGaN-InGaN-GaN; HEMT; channel velocity; frequency dependent current gain; modulation efficiency; polarization fields; strain effects; underlap junction; Conferences; Decision support systems; Diffusion tensor imaging; Nanoscale devices; Aluminum Gallium Nitride; Cutoff Frequency; Gallium Nitride; Modulation;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4673-6039-5
Electronic_ISBN :
978-1-4673-6038-8
DOI :
10.1109/DTIS.2013.6527779
