Reconfigurable low noise amplifier using MEMS varactor

Author

Emami, N. ; Arshed, O. ; Bakri-Kassem, Maher ; Albasha, L.

Author_Institution

Dept. of Electr. Eng., American Univ. of Sharjah, Sharjah, United Arab Emirates

fYear

2013

fDate

26-28 March 2013

Firstpage

145

Lastpage

150

Abstract

A frequency reconfigurable LNA is designed using novel tunable RF-MEMS varactors. The designed MEMS varactor can be fabricated and integrated in 0.35μm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC). The frequency of operation of the LNA varies from 2.7 GHz to 3.1 GHz by tuning the capacitance of the MEMS varactor. The MEMS varactor is simulated in ANSYS and the obtained results are included in the LNA design. The LNA performance is simulated and the results are discussed.

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; capacitance; low noise amplifiers; microfabrication; semiconductor device manufacture; varactors; ANSYS; CMOS technology; LNA design; LNA performance; TSMC; Taiwan Semiconductor Manufacturing Company; capacitance tuning; frequency 2.7 GHz to 3.1 GHz; frequency reconfigurable LNA; reconfigurable low noise amplifier; size 0.35 mum; tunable RF-MEMS varactors; Capacitance; Decision support systems; Diffusion tensor imaging; Nanoscale devices; RF MEMS; low noise amplifier; low power; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on

Conference_Location

Abu Dhabi

Print_ISBN

978-1-4673-6039-5

Electronic_ISBN

978-1-4673-6038-8

Type

conf

DOI

10.1109/DTIS.2013.6527795

Filename

6527795