DocumentCode :
605506
Title :
Compact modeling and applications of Carbon nanotube field effect transistors CNTFETs based CMOS-like complementary NOR, OR, NAND, and AND logic gates
Author :
I´Msaddak, L. ; Ben Issa, Dalenda ; Kachouri, A.
Author_Institution :
Dept. of Electr. Eng., ENIS, Sfax, Tunisia
fYear :
2013
fDate :
26-28 March 2013
Firstpage :
176
Lastpage :
177
Abstract :
In this paper, CMOS architectures for NOT, AND, OR, NOR and NAND gates were proposed using C-CNTFETs and their operational characteristics were checked using the simulator SPICE. The CNTFETs utilize a semiconducting Carbon nanotube (CNT) channel controlled by isolated electrostatic gates. Circuit-compatible model of conventional CNTFET, which demonstrates p-type or n-type switching behavior depending on the gate voltage, is implemented in SPICE and the designs are extensively simulated in SPICE. The power and delay performance of CNTFETs were investigated in basic logic gates for DCNT=1.42 nm on this SPICE model.
Keywords :
CMOS logic circuits; SPICE; carbon nanotube field effect transistors; logic gates; semiconductor device models; C; C-CNTFET; CMOS-like complementary NAND logic gates; CMOS-like complementary NOR logic gates; SPICE model; SPICE simulator; carbon nanotube field effect transistors; compact modeling; isolated eleetrostatie gates; n-type switching; p-type switching; semiconducting CNT channel; semiconducting carbon nanotube channel; CNTFETs; Capacitance; Carbon nanotubes; Delays; Logic gates; SPICE; Switches; AND2; Carbon nanotube field effect transistors (CNTFET); Compact model; NAND2; NAND3; NOR2; NOR3 gates; NOT; OR2; SPICE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4673-6039-5
Electronic_ISBN :
978-1-4673-6038-8
Type :
conf
DOI :
10.1109/DTIS.2013.6527803
Filename :
6527803
Link To Document :
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