Title :
Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist
Author :
Zhang, Rongting ; Li, Yuhua ; Murray, Jacob ; Bunting, A.S. ; Smith, Samuel ; Dunare, C.C. ; Stevenson, J.T.M. ; Desmulliez, M.P. ; Walton, A.J.
Author_Institution :
Inst. of Integrated Micro & Nano Syst., Univ. of Edinburgh, Edinburgh, UK
Abstract :
An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.
Keywords :
copper; electroplating; integrated circuit interconnections; photoresists; three-dimensional integrated circuits; Cu; Kelvin contact resistance structures; Kelvin test structures; bottom-up electroplating; contact chain test structures; electrical evaluation; high aspect ratio TSV arrays; planarised sacrificial photoresist; size 240 mum; size 6 cm; through-silicon-via technology; Copper; Electrical resistance measurement; Kelvin; Periodic structures; Resistance; Resists; Through-silicon vias; Daisy chain; Kelvin structure; TSV; electroplating; photoresist CMP;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2013.6528142
