DocumentCode :
605522
Title :
Effective channel length estimation using charge-based capacitance measurement
Author :
Tsuji, Keita ; Terada, Kenji
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
fYear :
2013
fDate :
25-28 March 2013
Firstpage :
59
Lastpage :
63
Abstract :
An effective channel length is estimated from the capacitance-voltage (C-V) curves of actual size MOSFETs which are measured using charge-based capacitance measurement (CBCM). To evaluate the accurate capacitances between the gate and the channel of sample MOSFETs, their parasitic capacitances are removed by using the test MOSFETs having various channel size and special test structure. A good linear relation between the gate-channel capacitance and the design channel length is obtained and then, the effective channel length is estimated from it. It is found that the obtained effective channel length is shorter than that extracted by the conventional channel resistance method.
Keywords :
MOSFET; capacitance measurement; MOSFET; channel size; charge-based capacitance measurement; effective channel length estimation; gate-channel capacitance; parasitic capacitances; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Logic gates; MOSFET; Voltage measurement; MOSFET; charge-based capacitance measurement; effective channel length;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
ISSN :
1071-9032
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2013.6528146
Filename :
6528146
Link To Document :
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