Evaluation of 1/f noise variability in the subthreshold region of MOSFETs

Author

Tuinhout, H. ; Duijnhoven, A.Z.

Author_Institution

NXP Semicond. - Design Platforms, Eindhoven, Netherlands

fYear

2013

fDate

25-28 March 2013

Firstpage

87

Lastpage

92

Abstract

This paper discusses the challenges of characterization of 1/f noise and its variability under weak-inversion operating conditions of MOSFETs. A dedicated test module was designed with a range of MOSFET types with different layout implementations, particularly focusing at the noise behavior of very wide transistors. Through extensive use of a commercial noise characterization system it proved possible to evaluate the variability of 1/f noise in weak-inversion, revealing several interesting and important subtleties of low frequency noise.

Keywords

1/f noise; MOSFET; electric noise measurement; semiconductor device noise; 1/f noise variability; MOSFET; dedicated test module; low frequency noise; noise behavior; subthreshold region; weak-inversion operating conditions; Logic gates; Low-frequency noise; Noise measurement; Sociology; Statistics; Transistors; 1/f noise; MOSFET; low frequency noise measurements; subthreshold; variability; weak inversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

Conference_Location

Osaka, Japan

ISSN

1071-9032

Print_ISBN

978-1-4673-4845-4

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2013.6528151

Filename

6528151