• DocumentCode
    605531
  • Title

    Reconsideration of the threshold voltage variability estimated with pair transistor cell array

  • Author

    Terada, Kenji ; Higuchi, N. ; Tsuji, Keita

  • Author_Institution
    Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
  • fYear
    2013
  • fDate
    25-28 March 2013
  • Firstpage
    108
  • Lastpage
    111
  • Abstract
    The standard deviation of threshold voltage, σVTH, which is estimated with Pair Transistor cell Array (PTA), is examined using the test chip fabricated by 65-nm technology. It is found that the errors are caused by two problems: 1) the problem in the approximation and 2) leak current in the isolation region. Taking them into account, the application of PTA to the test structure in scribe line is studied.
  • Keywords
    MOSFET; PTA; isolation region; leak current; pair transistor cell array; size 65 nm; test chip; test structure; threshold voltage standard deviation; threshold voltage variability; Approximation methods; Current measurement; Logic gates; MOSFET; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
  • Conference_Location
    Osaka, Japan
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4673-4845-4
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2013.6528155
  • Filename
    6528155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=605531