Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

Author

Maiti, T.K. ; Hayashi, Teruaki ; Mori, Hisamichi ; Kang, M.J. ; Takimiya, Kazuo ; Miura-Mattausch, M. ; Mattausch, Hans Jurgen

Author_Institution

HiSIM Res. Center, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

25-28 March 2013

Firstpage

157

Lastpage

161

Abstract

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C₁₀-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

Keywords

semiconductor device models; semiconductor device testing; surface potential; thin film transistors; C₁₀-DNTT high performance test devices; deep trap states; high performance dinaphtho thieno thiophene; inversion regime; organic thin film transistor model; surface potential based compact model; Integrated circuit modeling; Logic gates; Mathematical model; Organic semiconductors; Organic thin film transistors; Semiconductor process modeling; Organic Thin-Film Transistors; compact model; surface potential; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

Conference_Location

Osaka, Japan

ISSN

1071-9032

Print_ISBN

978-1-4673-4845-4

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2013.6528164

Filename

6528164