Title :
Electrical and mechanical characterizations of a large-area, printed organic transistor active matrix with floating-gate-based nonuniformity compensator
Author :
Sekitani, Tsuyoshi ; Yokota, Tomoyuki ; Tokuhara, T. ; Someya, Takao
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
In this paper, we report the testing of the performance variations in a large-scale, printed, ultraflexible organic transistor active matrix on a 10-μm thin-film plastic substrate. A printed active matrix comprising printed floating gate organic transistors has been manufactured using high-definition screen-printing and inkjet-printing. Furthermore, by applying feedback control to the threshold voltages of the floating gate organic transistors, the circuit can be made to compensate for the device-to-device nonuniformity, which is less than 5%. The mechanical characteristics of the printed transistors are also evaluated. As a 10-μm thin film is used as the substrate, critical bending radii of less than 0.5 mm are achieved.
Keywords :
circuit feedback; compensation; flexible electronics; organic field effect transistors; semiconductor device testing; thin film transistors; device-to-device nonuniformity; electrical characterizations; feedback control; floating-gate-based nonuniformity compensator; high-definition screen-printing; inkjet-printing; large-area printed organic transistor active matrix; mechanical characterizations; printed floating gate organic transistors; size 10 mum; thin-film plastic substrate; Electrodes; Logic gates; Nonvolatile memory; Performance evaluation; Printing; Threshold voltage; Transistors; Flexible electronics; Printed electronics; variation characterizations;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2013.6528165