• DocumentCode
    605541
  • Title

    Electrical and mechanical characterizations of a large-area, printed organic transistor active matrix with floating-gate-based nonuniformity compensator

  • Author

    Sekitani, Tsuyoshi ; Yokota, Tomoyuki ; Tokuhara, T. ; Someya, Takao

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    25-28 March 2013
  • Firstpage
    162
  • Lastpage
    166
  • Abstract
    In this paper, we report the testing of the performance variations in a large-scale, printed, ultraflexible organic transistor active matrix on a 10-μm thin-film plastic substrate. A printed active matrix comprising printed floating gate organic transistors has been manufactured using high-definition screen-printing and inkjet-printing. Furthermore, by applying feedback control to the threshold voltages of the floating gate organic transistors, the circuit can be made to compensate for the device-to-device nonuniformity, which is less than 5%. The mechanical characteristics of the printed transistors are also evaluated. As a 10-μm thin film is used as the substrate, critical bending radii of less than 0.5 mm are achieved.
  • Keywords
    circuit feedback; compensation; flexible electronics; organic field effect transistors; semiconductor device testing; thin film transistors; device-to-device nonuniformity; electrical characterizations; feedback control; floating-gate-based nonuniformity compensator; high-definition screen-printing; inkjet-printing; large-area printed organic transistor active matrix; mechanical characterizations; printed floating gate organic transistors; size 10 mum; thin-film plastic substrate; Electrodes; Logic gates; Nonvolatile memory; Performance evaluation; Printing; Threshold voltage; Transistors; Flexible electronics; Printed electronics; variation characterizations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
  • Conference_Location
    Osaka, Japan
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4673-4845-4
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2013.6528165
  • Filename
    6528165