DocumentCode :
605545
Title :
A novel test structure to implement a programmable logic array using split-gate flash memory cells
Author :
Om´mani, H. ; Tadayoni, M. ; Thota, Neena ; Ian Yue ; Nhan Do
Author_Institution :
Silicon Storage Technol., A Subsidiary of Microchip Technol. Inc., San Jose, CA, USA
fYear :
2013
fDate :
25-28 March 2013
Firstpage :
192
Lastpage :
194
Abstract :
We developed a novel configurable logic array test structure using a highly scalable 3rd generation split-gate flash memory cell that features low power and fast configuration time. This split-gate SuperFlash® configuration element (SCE) has been demonstrated with a 90nm embedded Flash technology. The resulting SCE eliminates the need for esoteric fabrication process, and sensing, and SRAM circuits and reduces configuration time for programmable arrays (PA) such as FPGAs and CPLDs. Additionally, SCE inherently ports the advantages of SST´s split-gate Flash memory technology with compact area, low-voltage read operation, low-power poly-to-poly erase and source-side channel hot electron (SSCHE) injection programming mechanisms, along with superior reliability.
Keywords :
SRAM chips; flash memories; logic arrays; logic testing; low-power electronics; CPLD; FPGA; SRAM circuits; SSCHE injection programming mechanisms; SST split-gate flash memory technology; configurable logic array test structure; embedded flash technology; esoteric fabrication process; highly scalable third generation split-gate flash memory cell; low-power poly-to-poly erase; low-voltage read operation; programmable logic array; reliability; source-side channel hot electron injection programming mechanisms; split-gate SCE; split-gate superflash configuration element; Arrays; Logic gates; Nonvolatile memory; Programming; Random access memory; Split gate flash memory cells; CPLD; FPGA; Programmable Logic Array; Split-Gate Flash Memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
ISSN :
1071-9032
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2013.6528170
Filename :
6528170
Link To Document :
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