Title :
Graphene FETs for Zero-Bias Linear Resistive FET Mixers
Author :
Moon, J.S. ; Seo, H.-C. ; Antcliffe, Mike ; Le, Dat ; McGuire, C. ; Schmitz, A. ; Nyakiti, Luke O. ; Gaskill, D. Kurt ; Campbell, P.M. ; Lee, Kok-Meng ; Asbeck, P.
Author_Institution :
HRL Labs. LLC, Mali, CA, USA
Abstract :
In this letter, we present the first graphene FET operation for zero-bias resistive FET mixers, utilizing modulation of graphene channel resistance rather than ambipolar mixer operations, up to 20 GHz. The graphene FETs with a gate length of 0.25 μm have an extrinsic cutoff frequency fT of 40 GHz and a maximum oscillation frequency fMAX of 37 GHz. At 2 GHz, the graphene FETs show a conversion loss of 14 dB with gate-pumped resistive FET mixing, with at least > 10-dB improvement over reported graphene mixers. The input third-order intercept points (IIP3s) of 27 dBm are demonstrated at a local oscillator (LO) power of 2.6 dBm. The excellent linearity demonstrated by graphene FETs at low LO power offers the potential for high-quality linear mixers.
Keywords :
graphene; losses; millimetre wave field effect transistors; millimetre wave mixers; millimetre wave oscillators; C; IIP3; LO; ambipolar mixer operation; extrinsic cutoff frequency; frequency 2 GHz; frequency 37 GHz; frequency 40 GHz; gate-pumped resistive FET mixing; graphene FET operation; graphene channel resistance modulation; graphene mixer; high-quality linear mixer; input third-order intercept point; local oscillator; loss 14 dB; maximum oscillation frequency; size 0.25 mum; zero-bias linear resistive FET mixer; FETs; Graphene; Logic gates; Mixers; Power measurement; Radio frequency; Resistance; $f_{T}$; $f_{rm MAX}$; FET; graphene; linearity; mixer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2236533
