Electrochemically grown nono-structured TiO2 based low power resistive random access memory

Nano TiO₂ thin film was grown on high purity Ti foil by electrochemical anodization techniques using 1 (M) as H₂SO₄ electrolyte. Film was annealed at 600⁰C for 1 hour to prepare rutile crystalline TiO₂. Au metal contact was used as a top electrode contact to fabricate Au/TiO₂/Ti memory devices for RRAM application. XRD, SEM and optical studies of the the TiO₂ thin film were carried out to investigate the structural, morphological and optical characteristics of the prepared TiO₂ thin film respectively. Bipolar resistive switching characteristics was measured using five different Au/TiO₂/Ti devices which showed very repeatable, reproducible and stable memory performance with very low set and reset voltage of +0.24 V and -0.25 V respectively without application of any electroforming voltage. Bipolar switching phenomenon was explained by Schottky emission theory as well as filamentary models.