Thermal noise analysis of SGMOSFET for different substrate and gate oxides

In improving field of Metal Oxide Semiconductor technology (MOS-technology), highly gate controllable structures are continuously developed in research labs. With increased controllability of gate, the size of the semiconductor devices is also decreasing. Similarly in MOS physics, the channel length have been decreased below 0.1µm but with MOSFET scaling several important parameters have to be analyzed whether they are showing Quantum effects or not. To understand the overall picture of thermal noise performance of SGMOSFET the short channel parameters such as length, radius of gate, working temperature, doping concentration and the other parameters varied. These results shaped by different simulation results can be taken as standard and optimum device constraints. By having these data we can understand which configurations are giving the best thermal noise performance under the same set of parameters-related simulation environment. In this paper we give the thermal noise performance of various substrates with respect to different oxides and propose best cases.