Title :
Study and comparison of MOSFET and MIGFET-based active inductor
Author :
Kumar, N.Krishna ; Nagarajan, K.K. ; Srinivasan, Rajagopalan
Author_Institution :
ECE Department, SSN College of Engineering, Chennai, India
Abstract :
In this paper, MOSFET-based and MIGFET-based active inductors configured using gyrator principle is studied and their tunability is compared in 45 nm technology node. It is found that MIGFET-based configuration greatly improves the tuning range of the active inductor than MOSFET-based configuration. The tunability range achieved in MIGFET-based active inductor is from 2 GHz to 260 GHz as compared with 25 GHz to 63 GHz in MOSFET-based active inductor configuration.
Keywords :
Inductors; Logic gates; MOSFET; Active Inductor; MIGFET; TSPICE;
Conference_Titel :
Circuits, Power and Computing Technologies (ICCPCT), 2013 International Conference on
Conference_Location :
Nagercoil
Print_ISBN :
978-1-4673-4921-5
DOI :
10.1109/ICCPCT.2013.6528917
