Title :
Structural and optical properties of the nanocrystalline ZnO films prepared by Successive Ionic Layer Adsorption and Reaction
Author :
El Hamri, El Houcine ; Elfanaoui, A. ; Boulkadat, L. ; Ihalane, E.H. ; Alahyane, L. ; Kirou, H. ; Bouabid, K. ; Ihlal, A. ; Laanab, L.
Author_Institution :
Dept. Phys., Lab. Mater. et Energies Renouvelables (LMER), Univ. Ibn Zohr, Agadir, Morocco
Abstract :
In this paper, we report on Zinc oxide (ZnO) thin films grown by means of simple and cost effective method: Successive Ionic Layer Adsorption and Reaction (SILAR). All the depositions were performed on cheap glass substrates at room temperature. Annealing temperatures and film thickness effect on the structural, morphological and optical properties of the films were investigated. The as-deposited films were annealed at 300 and 400°C for 1 h under oxygen atmosphere. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) characterizations showed that the films covered the whole glass substrates and exhibit the wurtzite hexagonal structure. All the films are nanostructured. The film thickness effect on the band gap values was investigated and band gap values were found to vary within the range 3.2 - 3.8 eV depending on the growth conditions.
Keywords :
II-VI semiconductors; X-ray diffraction; adsorption; annealing; energy gap; infrared spectra; liquid phase deposition; nanofabrication; nanoparticles; scanning electron microscopy; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SEM; SiO2; X-ray diffraction; XRD; ZnO; ammonium zincate solution bath; annealing temperature; band gap; film thickness effect; glass substrates; morphological properties; nanocrystalline zinc oxide thin films; nanosized particles; optical properties; oxygen atmosphere; scanning electron microscopy; structural properties; successive ionic layer adsorption and reaction; temperature 293 K to 298 K; temperature 300 degC; temperature 400 degC; time 1 h; wurtzite hexagonal structure; Annealing; Diffraction; Educational institutions; Films; Morphology; Optical variables measurement; Photonic band gap; Annealing and band gap; Nanostructure; SILAR; Thin films; zinc oxide ZnO;
Conference_Titel :
Renewable and Sustainable Energy Conference (IRSEC), 2013 International
Conference_Location :
Ouarzazate
Print_ISBN :
978-1-4673-6373-0
DOI :
10.1109/IRSEC.2013.6529728
