• DocumentCode
    606677
  • Title

    Detailed analysis of surface recombination in crystalline silicon solar cells

  • Author

    Belghachi, A.

  • Author_Institution
    Phys. Dept., Univ. of Bechar, Bechar, Algeria
  • fYear
    2013
  • fDate
    7-9 March 2013
  • Firstpage
    161
  • Lastpage
    166
  • Abstract
    Losses in solar cells are major concern for photovoltaic designers and minimizing them is the aim of all workers in this field. Recombination of photo generated charge carriers, both in the bulk and at surfaces, is the most prominent loss mechanism. In this work, surface recombination effect on crystalline silicon solar cells, both at the front and rear sides, is investigated. For typical thin silicon solar cell (100μm) the rear surface recombination is more important than the front. This could be treated by reducing rear surface metallization coverage or of a BSF layer while the front recombination could be reduced by surface passivation.
  • Keywords
    metallisation; silicon; solar cells; crystalline silicon solar cells; photo generated charge carriers; prominent loss mechanism; rear surface metallization coverage reduction; size 100 mum; surface passivation; surface recombination; surface recombination effect; Electron traps; Photovoltaic cells; Radiative recombination; Silicon; Surface treatment; Fermi level; external quantum efficiency; silicon; surface recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Renewable and Sustainable Energy Conference (IRSEC), 2013 International
  • Conference_Location
    Ouarzazate
  • Print_ISBN
    978-1-4673-6373-0
  • Type

    conf

  • DOI
    10.1109/IRSEC.2013.6529729
  • Filename
    6529729