DocumentCode
606677
Title
Detailed analysis of surface recombination in crystalline silicon solar cells
Author
Belghachi, A.
Author_Institution
Phys. Dept., Univ. of Bechar, Bechar, Algeria
fYear
2013
fDate
7-9 March 2013
Firstpage
161
Lastpage
166
Abstract
Losses in solar cells are major concern for photovoltaic designers and minimizing them is the aim of all workers in this field. Recombination of photo generated charge carriers, both in the bulk and at surfaces, is the most prominent loss mechanism. In this work, surface recombination effect on crystalline silicon solar cells, both at the front and rear sides, is investigated. For typical thin silicon solar cell (100μm) the rear surface recombination is more important than the front. This could be treated by reducing rear surface metallization coverage or of a BSF layer while the front recombination could be reduced by surface passivation.
Keywords
metallisation; silicon; solar cells; crystalline silicon solar cells; photo generated charge carriers; prominent loss mechanism; rear surface metallization coverage reduction; size 100 mum; surface passivation; surface recombination; surface recombination effect; Electron traps; Photovoltaic cells; Radiative recombination; Silicon; Surface treatment; Fermi level; external quantum efficiency; silicon; surface recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Renewable and Sustainable Energy Conference (IRSEC), 2013 International
Conference_Location
Ouarzazate
Print_ISBN
978-1-4673-6373-0
Type
conf
DOI
10.1109/IRSEC.2013.6529729
Filename
6529729
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