On the crack and delamination risk optimization of a Si-interposer for LED packaging

3D-integration becomes more and more an important issue for advanced LED packaging solutions as it is a great challenge for the thermo-mechanical reliability to remove heat from LEDs to the environment by heat spreading or specialized cooling technologies. Thermal copper-TSVs provide an elegant solution to effectively transfer heat from LED to the heat spreading structures on the backside of a substrate. But, the use of copper-TSVs generates also novel challenges for reliability as well as also for reliability analysis and prediction, i.e. to manage multiple failure modes acting combined - interface delamination, cracking and fatigue, in particular. In this case, the thermal expansion mismatch between copper and silicon yields to risky stress situations. Therefore, the authors performed extensive simulative work to overcome cracking and delamination risks in the vicinity of thermal copper-TSVs by means of fracture mechanics approaches. Especially, an interaction integral approach is utilized within a simulative DoE and X-FEM is used to help clarifying crack propagation paths in silicon. The DoE-based response surface methodology provided a good insight into the role of model parameters for further optimizations of the intended thermal TSV-approaches in LED packaging applications.