Title :
Integration of a new Through Silicon Via concept in a microelectronic pressure sensor
Author :
Bergmann, Y. ; Reinmuth, J. ; Will, Bianca ; Hain, M.
Author_Institution :
Automotive Electron., Robert Bosch GmbH, Reutlingen, Germany
Abstract :
A novel Through Silicon Via approach developed by Bosch offers high integration density of MEMS with a great cost saving potential. In this paper a Si-TSV process for MEMS is presented. To assess the stress influence of the TSV process on the silicon substrate, the TSV process was integrated in a piezo-resistive pressure sensor as a Via-Last approach. Etching and deposition of multiple layers as well as grinding of a silicon wafer may cause thermal and mechanical stress, which may affect the sensor´s operation and signal-processing. Electrical measurements were carried out to evaluate the stress-responsive sensor characteristics. Results show that the Si-TSV process presented does not cause any deterioration of the pressure sensor´s characteristics.
Keywords :
etching; micromechanical devices; pressure sensors; substrates; three-dimensional integrated circuits; MEMS; TSV process; cost saving potential; deposition; electrical measurement; etching; high integration density; mechanical stress; microelectronic pressure sensor; piezo resistive pressure sensor; pressure sensor characteristics; signal processing; silicon substrate; silicon wafer; stress responsive sensor characteristics; through silicon via concept; Abstracts; Cavity resonators; Chirp; Geometry; Standards; Through-silicon vias;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-1-4673-6138-5
DOI :
10.1109/EuroSimE.2013.6529892