Title :
Investigation of stress states in silicon dies induced by the Low Temperature Joining Technology
Author :
Herboth, T. ; Guenther, M. ; Zeiser, R. ; Wilde, J.
Author_Institution :
Robert Bosch GmbH, Schwieberdingen, Germany
Abstract :
The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.
Keywords :
joining processes; silicon; sintering; LTJT; Si; copper substrate; initial stress state; low temperature joining technology; silicon dies; sintering; stress-free temperature; thermal cycling; Abstracts; Copper; Polymers; Pressure measurement; Semiconductor device measurement; Silicon; Stress measurement;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-1-4673-6138-5
DOI :
10.1109/EuroSimE.2013.6529945
