• DocumentCode
    60702
  • Title

    A Digital Polar CMOS Power Amplifier With a 102-dB Power Dynamic Range Using a Digitally Controlled Bias Generator

  • Author

    Hyunseok Choi ; Yumi Lee ; Songcheol Hong

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
  • Volume
    62
  • Issue
    3
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    579
  • Lastpage
    589
  • Abstract
    A digitally modulated CMOS power amplifier (DPA) for a polar transmitter with a high dynamic range is presented. To improve local oscillator (LO) leakage, which limits the minimum output power of the DPA, the unit amplifier cell of the DPA employs a balanced mixer-type LO canceller at the power stage and a virtual ground is introduced in the layout of the output-power combining networks. A high dynamic range of the output power is simply achieved by adjusting gate-bias voltage of a cascode transistor in each power amplifier (PA) cell using a digitally controlled bias generator. This architecture allows a few-mA drain current at a low Tx power level without degrading the linearity. An array of unit PA cells is segmented to have a 10-bit amplitude resolution, and the bias generator is designed to have 8-bit control of the average output power. The peak output power is 24.4 dBm with an overall efficiency of 43% at 800 MHz. The total output dynamic range is 102.8 dB. A simple static pre-distortion helps the DPA achieve an average efficiency of 35% with a root mean square error vector magnitude of 3.59% while delivering linear output power of 22 dBm for WCDMA. The range of the digital transmit-power control for the WCDMA signal is 49.7 dB. This chip is fabricated in a 65-nm RF CMOS process.
  • Keywords
    CMOS digital integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; RF CMOS; WCDMA signal; balanced mixer-type LO canceller; cascode transistor; digital polar CMOS power amplifier; digitally controlled bias generator; digitally modulated CMOS power amplifier; frequency 800 MHz; local oscillator leakage; polar transmitter; power dynamic range; power stage; size 65 nm; static pre-distortion; unit amplifier cell; virtual ground; word length 10 bit to 8 bit; Computer architecture; Dynamic range; Generators; Microprocessors; Power generation; Transistors; Transmitters; CMOS RF power amplifier (PA); Tx power control; WCDMA; digital amplitude modulation; digitally modulated PA; dynamic range; local oscillator (LO) leakage; polar transmitter;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2014.2298386
  • Filename
    6712158