Title :
Physical Model Analysis During Transient for Series-Connected HVIGBTs
Author :
Shiqi Ji ; Ting Lu ; Zhengming Zhao ; Hualong Yu ; Liqiang Yuan ; Sheng Yang ; Secrest, Caleb
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
Obvious differences are observed between simulation and experimental results for series-connected insulated-gate bipolar transistors (IGBTs) using current IGBT models. Here, the cause of these errors is analyzed in detail. A physical model based on more effective assumptions for a 2-D structure is proposed in this paper. The relationship between carrier concentration and lifetime is considered in the model in order to achieve an accurate description for excess carrier distribution. Testing was performed in a buck converter using series-connected non-punch-through (NPT) planar-gate 6500 V/600 A high-voltage IGBTs (HVIGBTs) at various bus voltages using an asynchronous control signal. The accuracy of HVIGBT transient model is verified by comparing experimental and simulation results in buck converters using two and three series-connected IGBTs. The function of the RC snubber circuit is also evaluated using the proposed model.
Keywords :
RC circuits; insulated gate bipolar transistors; power convertors; snubbers; 2D structure; NPT planar-gate; RC snubber circuit; buck converters; current 600 A; excess carrier distribution; high-voltage insulated-gate bipolar transistors; non-punch-through planar-gate; physical model analysis; series-connected HVIGBT; transient model; voltage 6500 V; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; Semiconductor device modeling; Transient analysis; Voltage control; High-voltage insulated-gated bipolar transistor (HVIGBT); series-connected; tail current; voltage unbalance;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2014.2300104
