DocumentCode :
60770
Title :
A Decision-Error-Tolerant 45 nm CMOS 7b 1 GS/s Nonbinary 2b/Cycle SAR ADC
Author :
Hyeok-Ki Hong ; Wan Kim ; Hyun-Wook Kang ; Sun-Jae Park ; Choi, Michael ; Ho-Jin Park ; Seung-Tak Ryu
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Volume :
50
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
543
Lastpage :
555
Abstract :
A compact decision-error-tolerant 2b/cycle SAR ADC architecture is presented. Two DACs with different designated functions, SIG-DAC and REF-DAC, are implemented to make the structure compact and to eliminate the sampling skew issue. Use of a nonbinary decision scheme with decision redundancies not only increases the ADC speed with a relaxed DAC settling requirement but also makes the performance robust to reference fluctuations and comparator offset variations. The proposed dynamic register and direct DAC control scheme enhance the conversion speed by minimizing logic delay in the SAR decision loop. The proposed comparator-error detection with digital error correction scheme enhances high-speed ADC performance. A prototype 7b ADC fabricated in a 45 nm CMOS process operates at a sampling rate of 1 GS/s under a 1.25 V supply while achieving a peak SNDR of 41.6 dB and maintaining an ENOB higher than 6 up to 1.3 GHz signal frequency. The FoM under a 1.25 V supply is an 80 fJ/conversion-step with a power consumption of 7.2 mW.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); digital-analogue conversion; error correction; low-power electronics; REF-DAC; SAR decision loop; SIG-DAC; comparator offset variations; comparator-error detection; decision redundancy; decision-error-tolerant CMOS; digital error correction; direct DAC control; dynamic register; high-speed ADC performance; logic delay; nonbinary SAR ADC; nonbinary decision scheme; power 7.2 mW; reference fluctuations; size 45 nm; structure compact; successive approximation register; voltage 1.25 V; CMOS integrated circuits; Error correction; Noise; Prototypes; Redundancy; Registers; Switches; 2b/cycle SAR ADC; nonbinary SAR ADC;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2364833
Filename :
6967867
Link To Document :
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