Title :
Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design
Author :
Farbiz, Farzan ; Appaswamy, A. ; Salman, Adnan Ahmed ; Boselli, G.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report a new challenge to IEC protection of high-speed devices caused by current filamentation due to voltage-overshoot effects in forward-biased diodes. While well understood in reverse-biased junctions, filamentation has never been reported in forward-biased junctions, which are often used in high-speed designs such as USB3 and HDMI. An analytical model is presented to estimate the voltage overshoot as a function of rise-time and bias conditions to predict the trade-offs inherent in low-capacitance ESD diodes.
Keywords :
electrostatic devices; electrostatic discharge; failure analysis; semiconductor diodes; HDMI; IEC protection; USB3; current filamentation; forward-biased diodes; forward-biased junctions; high-speed ESD design; high-speed devices; low-capacitance ESD diodes; overshoot-induced failures; reverse-biased junctions; voltage-overshoot effects; Analytical models; Capacitance; Conductivity; Electrostatic discharges; IEC; IEC standards; Junctions; Filamentation; High speed; IEC; Voltage overshoot;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531946
