Title :
Power supply clamp for multi-domain mixed-signal SiGe BiCMOS applications
Author :
Salcedo, Javier A. ; Parthasarathy, Srinivasan ; Hajjar, Jean-Jacques
Author_Institution :
Analog Devices, Inc., Wilmington, MA, USA
Abstract :
An active power supply clamp for precision high speed SiGe BiCMOS applications is introduced. The clamp architecture includes functional blocks for transient stress detection, stress-adapted activation feedback and mistriggering control. Electrostatic discharge (ESD) robustness is demonstrated in high speed/high voltage BiCMOS SiGe applications operating at supply voltages beyond the breakdown voltage constraint in the bipolar signal processing blocks during ESD stress.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; clamps; electrostatic discharge; mixed analogue-digital integrated circuits; power supply circuits; ESD stress; SiGe; active power supply clamp; bipolar signal processing blocks; breakdown voltage constraint; clamp architecture; electrostatic discharge robustness; functional blocks; mistriggering control; multidomain mixed-signal BiCMOS applications; stress-adapted activation feedback; transient stress detection; Capacitance; Clamps; Electrostatic discharges; Silicon germanium; Stress; Transient analysis; Voltage measurement; Electrostatic Discharge (ESD); High Speed RF Amplifier; Low Noise Amplifier; Microwave Transceiver; SiGe BiCMOS Technology; Supply Clamp; Wireless Infrastructure;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531948
