Enhanced PMOS-triggered PMLSCR with robust EOS immunity

Author

Shih-Yu Wang ; Yong-Han He ; Chieh-Wei He ; Hao-Chan Huang ; Yao-Wen Chang ; Tao-Cheng Lu ; Kuang-Chao Chen ; Chih-Yuan Lu

Author_Institution

Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

14-18 April 2013

Abstract

An enhanced PMOS-triggered PMLSCR is proposed. Under the condition that both PNP and NPN BJT´s are triggered simultaneously, voltage overshoot and turn-on uniformity can be further improved. From TCAD simulation, it is clear that with the help of trigger current, conduction path of SCR goes deeper and snapback voltage is reduced. By the designed power sequence, holding voltage and current of SCR devices considering self-heating effect are attained. Robust EOS immunity can be assured accordingly.

Keywords

MOS-controlled thyristors; bipolar transistors; circuit CAD; circuit simulation; electrostatic discharge; technology CAD (electronics); trigger circuits; NPN BJT; PNP BJT; TCAD simulation; enhanced PMOS-triggered PMLSCR; holding current; holding voltage; p-type modified lateral silicon-controlled rectifier; power sequence design; robust EOS immunity; self-heating effect; snapback voltage reduction; turn-on uniformity; voltage overshoot; Anodes; Earth Observing System; Electrostatic discharges; Robustness; Thyristors; Trigger circuits; Video recording; EOS; ESD; MLSCR; PMOS-Triggered; TCAD; voltage overshoot;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531949

Filename

6531949