Title :
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
Author :
Gerrer, Louis ; Amoroso, Salvatore Maria ; Asenov, P. ; Ding, J. ; Cheng, Binjie ; Adamu-Lema, F. ; Markov, Stanislav ; Asenov, Asen ; Reid, Dave ; Millar, C. ; Asenov, Asen
Author_Institution :
Device Modeling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived.
Keywords :
MOSFET; Monte Carlo methods; circuit simulation; semiconductor device models; semiconductor device reliability; statistical analysis; BTI; MOSFET; RTN phenomenon; atomistic devices; atomistic simulations; circuit lifetime projections; detrapping dynamics; kinetic Monte-Carlo engine; oxide degradation simulations; reliability simulation framework; statistical reliability; statistical variability; transistor-to-circuit simulation technology; trapping dynamics; traps interactions; Degradation; Electron traps; Integrated circuit modeling; Integrated circuit reliability; Resource description framework; Stress; BTI degradation; atomistic simulation; compact modelling; oxide reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531972
