Reliability issue of 20 nm MLC NAND Flash

Author

Tae-Un Youn ; Keum-Whan Noh ; Sang-Mok Yi ; Jong-Wook Kim ; Noh-Yong Park ; Sung-chul Shin ; Kwang-Hyun Yun ; Byung-Kook Kim ; Sung-Kye Park ; Seok-Kiu Lee ; Sung-Joo Hong

Author_Institution

R&D Div., SK Hynix Inc., Cheongju, South Korea

fYear

2013

fDate

14-18 April 2013

Abstract

We report reliability issues of MLC NAND Flash memories due to the cell size scaling down to 20nm. For word line (WL) air-gap process to overcome the Floating gate (FG) - FG coupling [1], we have investigated the hydrogen effect of Inter-Layer-Dielectric (ILD) materials on reliability characteristics. We also demonstrate different charge loss phenomenon through Inter-Poly-Dielectric (IPD) on 20nm cells by the IPD scaling due to narrow FG to FG isolation space from measured lower activation energy(Ea) value (0.33 eV) than previously reported.

Keywords

NAND circuits; circuit reliability; dielectric devices; dielectric materials; flash memories; FG isolation space; ILD; IPD; MLC NAND flash memory; WL; charge loss phenomenon; floating gate coupling; hydrogen effect; interayer-dielectric material; interpolydielectric scaling; reliability characteristics; size 20 nm; word line air-gap process; Air gaps; Annealing; Electron traps; Flash memories; Hydrogen; Reliability; IPD; airgap; charge loss; hydrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531978

Filename

6531978