Title :
Reliability issue of 20 nm MLC NAND Flash
Author :
Tae-Un Youn ; Keum-Whan Noh ; Sang-Mok Yi ; Jong-Wook Kim ; Noh-Yong Park ; Sung-chul Shin ; Kwang-Hyun Yun ; Byung-Kook Kim ; Sung-Kye Park ; Seok-Kiu Lee ; Sung-Joo Hong
Author_Institution :
R&D Div., SK Hynix Inc., Cheongju, South Korea
Abstract :
We report reliability issues of MLC NAND Flash memories due to the cell size scaling down to 20nm. For word line (WL) air-gap process to overcome the Floating gate (FG) - FG coupling [1], we have investigated the hydrogen effect of Inter-Layer-Dielectric (ILD) materials on reliability characteristics. We also demonstrate different charge loss phenomenon through Inter-Poly-Dielectric (IPD) on 20nm cells by the IPD scaling due to narrow FG to FG isolation space from measured lower activation energy(Ea) value (0.33 eV) than previously reported.
Keywords :
NAND circuits; circuit reliability; dielectric devices; dielectric materials; flash memories; FG isolation space; ILD; IPD; MLC NAND flash memory; WL; charge loss phenomenon; floating gate coupling; hydrogen effect; interayer-dielectric material; interpolydielectric scaling; reliability characteristics; size 20 nm; word line air-gap process; Air gaps; Annealing; Electron traps; Flash memories; Hydrogen; Reliability; IPD; airgap; charge loss; hydrogen;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531978
