MONOS specific interface state generation/recovery mechanisms and their impact on reliability properties

Mechanisms of interface-state generation/recovery in MONOS memories were investigated. We found that the interface states are mostly due to Si-H bonds breakage, and that additional reactive species, which could be attributable to above-stacked SiN layer, are supplied to the interface during baking and passivate interface states, leading to the strengthened bond structure against electrical stress. These findings indicate that reliability properties can be improved by applying appropriate electrical stress and baking owing to replacement of Si-H to stronger bond.