GaN-HEMTs devices with single- and double-heterostructure for power switching applications

Author

Meneghesso, Gaudenzio ; Zanandrea, Alberto ; Stocco, Andrea ; Rossetto, Isabella ; De Santi, C. ; Rampazzo, Franco ; Meneghini, Matteo ; Zanoni, Enrico ; Bahat-Treidel, E. ; Hilt, O. ; Ivo, P. ; Wuerfl, J.

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padua, Italy

fYear

2013

fDate

14-18 April 2013

Abstract

We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures.

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; power semiconductor switches; wide band gap semiconductors; AlGaN; DH devices; HEMT devices; SH devices; breakdown measurements; breakdown voltage; dc measurements; degradation process; double-heterostructure; electroluminescence; epitaxial structures; measurable kink; off-state step stress; power switching applications; pulsed measurements; punch-through leakage current components; single-heterostructure; Buffer layers; DH-HEMTs; Degradation; Gallium nitride; Logic gates; MODFETs; Gallium Nitride; power HEMTs; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531983

Filename

6531983