Title :
At speed HTOL test for reliability qualification of high speed mobile applications
Author :
Jongwoo Park ; Da Ahn ; Donghee Lee ; Jang, E.-S. ; Wooyeon Kim ; Sangchul Shin ; Gunrae Kim ; Nae-In Lee ; Sangwoo Pae
Author_Institution :
Technol. Quality Reliability, Quality & Reliability Team, Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
In this paper, intuition is given on the Vmin shift behaviors under high speed frequency high temperature operating life (HTOL) stress conditions on Dual- and Quad-Core Application Processors (AP) fabricated with advanced High-k/Metal-gate (HK/MG) process. Unlike a constant frequency at 1 MHz, At Speed HTOL (ASH) stress tests over 1.5 GHz enables pragmatic Vmin trends. ASH Vmin results represent more realistic Vmin-shift from the viewpoint of both reliability stress and prediction of field EOL. We´ll discuss Vmin shift results on ASH and its perspective as the current and future qualification tool for high speed mobile applications.
Keywords :
UHF integrated circuits; integrated circuit reliability; integrated circuit testing; microprocessor chips; stress analysis; ASH stress tests; at speed HTOL stress testing; dual-core application processor; field EOL prediction; frequency 1.5 GHz; high speed frequency high temperature operating life testing; high speed mobile application; high-k-metal-gate process; pragmatic Vmin shift behavior; quadcore application processor; reliability qualification; reliability stress; Ash; IP networks; Integrated circuit reliability; Reliability engineering; Standards; Stress; High-k; Vmin; application processor; at speed HTOL; reliability qualification;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531995
