DocumentCode
608181
Title
Short line electromigration characteristics and their applications for circuit design
Author
Baozhen Li ; Christiansen, C. ; Burke, C. ; Hogle, N. ; Badami, D.
Author_Institution
IBM Syst. & Technol. Group, Essex Junction, VT, USA
fYear
2013
fDate
14-18 April 2013
Abstract
Technology scaling has led to severe electromigration degradation for advanced interconnects. Taking full advantage of the Blech effect benefit has become more and more important for circuit design to overcome this EM performance degradation. Due to the wide range of circuit design layout variations, understanding the EM characteristics of the short lines closely related to the real circuit and chip design applications is needed. In this study, EM characteristics of a wide range of different short line structures are investigated. These structures include simple short line segments, short line segments with branches and with passive passing lines on top, and long lines with only a short portion carrying current. Implications of these results to circuit and chip design are also discussed.
Keywords
electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; Blech effect; EM performance degradation; advanced interconnects; chip design applications; circuit design; passive passing lines; short line electromigration characteristics; short line segments; Anodes; Chip scale packaging; Circuit synthesis; Degradation; Integrated circuit interconnections; Metals; Stress; Blech effect; Cu interconnect; circuit design; electromigration; short length;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532000
Filename
6532000
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