• DocumentCode
    608181
  • Title

    Short line electromigration characteristics and their applications for circuit design

  • Author

    Baozhen Li ; Christiansen, C. ; Burke, C. ; Hogle, N. ; Badami, D.

  • Author_Institution
    IBM Syst. & Technol. Group, Essex Junction, VT, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    Technology scaling has led to severe electromigration degradation for advanced interconnects. Taking full advantage of the Blech effect benefit has become more and more important for circuit design to overcome this EM performance degradation. Due to the wide range of circuit design layout variations, understanding the EM characteristics of the short lines closely related to the real circuit and chip design applications is needed. In this study, EM characteristics of a wide range of different short line structures are investigated. These structures include simple short line segments, short line segments with branches and with passive passing lines on top, and long lines with only a short portion carrying current. Implications of these results to circuit and chip design are also discussed.
  • Keywords
    electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; Blech effect; EM performance degradation; advanced interconnects; chip design applications; circuit design; passive passing lines; short line electromigration characteristics; short line segments; Anodes; Chip scale packaging; Circuit synthesis; Degradation; Integrated circuit interconnections; Metals; Stress; Blech effect; Cu interconnect; circuit design; electromigration; short length;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532000
  • Filename
    6532000