Title :
A built-in BTI monitor for long-term data collection in IBM microprocessors
Author :
Pong-Fei Lu ; Jenkins, Keith A.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A circuit for long-term measurement of bias temperature instability (BTI) degradation is described. It is an entirely on-chip measurement circuit, which reports measurements periodically with a digital output. Implemented on IBM´s z196 Enterprise systems, it can be used to monitor long-term degradation under real-use conditions. Over 500 days worth of ring oscillator degradation data from customer systems are presented. The importance of using a reference oscillator to measure performance degradation in the field, where the supply voltage and temperature can vary dynamically, is shown.
Keywords :
measurement systems; microprocessor chips; negative bias temperature instability; oscillators; IBM microprocessors; IBM z196 enterprise systems; bias temperature instability degradation; built-in BTI monitor; customer systems; long-term data collection; long-term measurement; on-chip measurement circuit; real-use conditions; reference oscillator; ring oscillator degradation data; Degradation; Frequency measurement; Monitoring; Ring oscillators; Temperature measurement; Time measurement; Voltage measurement; bias-temperature instability; long-term measurement; on-chip measurement; ring oscillator Introduction;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532003
