Title :
Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies
Author :
Subirats, Alexandre ; Garros, Xavier ; Mazurier, J. ; El Husseini, Joanna ; Rozeau, O. ; Reimbold, Gilles ; Faynot, O. ; Ghibaudo, Gerard
Author_Institution :
CEA-Leti, Grenoble, France
Abstract :
In this paper we demonstrate that fast oxide trapping mechanism can be responsible for significant dynamic variability of Vt, gm and Id at circuit operating conditions. An estimation of the effect of these variabilities has been made using Monte Carlo simulations. The impact of the measured variabilities on SRAM performance is found appreciable since a margin of ~50mV in the minimum supply voltages is required to overcome this effect.
Keywords :
CMOS memory circuits; Monte Carlo methods; SRAM chips; Monte Carlo simulations; SRAM functionality; SRAM performance; circuit operating conditions; dynamic variability; fast oxide trapping mechanism; minimum supply voltages; nanoscaled CMOS technologies; Charge carrier processes; Computer aided software engineering; Degradation; Gaussian distribution; MOS devices; Random access memory; Transistors; Circuit; MOSFETs; Reliability; SRAM; Variability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532008
