DocumentCode
608190
Title
Acceleration factor determination for potential-induced degradation in crystalline silicon PV modules
Author
Hacke, Peter ; Smith, Ross ; Terwilliger, Kent ; Glick, Stephen ; Jordan, Dirk ; Johnston, Samuel ; Kempe, M. ; Kurtz, S.
Author_Institution
Nat. Renewable Energy Lab. (NREL), Golden, CO, USA
fYear
2013
fDate
14-18 April 2013
Abstract
Potential-induced degradation in conventional p-type silicon-based photovoltaic solar cell modules is described as a failure mechanism involving positive ion migration, understood to be primarily Na+, drifting from the glass to the cells in negative-voltage arrays. Acceleration factors for this mechanism are determined for silicon photovoltaic modules by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at the constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. Estimation of module power in-situ in the environmental chamber is achieved using dark I-V measurements transformed by superposition. By this means, the power of the degrading module can be semi-continuously determined so that statistical data for multiple modules undergoing potential-induced degradation can be easily and accurately obtained.
Keywords
elemental semiconductors; failure analysis; life testing; probability; silicon; sodium; solar cells; statistical analysis; Si; accelerated lifetime test data; acceleration factor determination; chamber testing; constant relative humidity; crystalline silicon PV modules; dark I-V measurements; electron volt energy 0.73 eV; environmental chamber; failure mechanism; initial module power; lognormal analysis; module failure probability; module power in-situ estimation; negative-voltage arrays; p-type silicon-based photovoltaic solar cell modules; potential-induced degradation; statistical data; Acceleration; Degradation; Life estimation; Photovoltaic systems; Stress; Temperature measurement; Testing; Current-voltage characteristics; Degradation; High-voltage techniques; Photovoltaic cells; Photovoltaic systems; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532009
Filename
6532009
Link To Document