• DocumentCode
    608190
  • Title

    Acceleration factor determination for potential-induced degradation in crystalline silicon PV modules

  • Author

    Hacke, Peter ; Smith, Ross ; Terwilliger, Kent ; Glick, Stephen ; Jordan, Dirk ; Johnston, Samuel ; Kempe, M. ; Kurtz, S.

  • Author_Institution
    Nat. Renewable Energy Lab. (NREL), Golden, CO, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    Potential-induced degradation in conventional p-type silicon-based photovoltaic solar cell modules is described as a failure mechanism involving positive ion migration, understood to be primarily Na+, drifting from the glass to the cells in negative-voltage arrays. Acceleration factors for this mechanism are determined for silicon photovoltaic modules by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at the constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. Estimation of module power in-situ in the environmental chamber is achieved using dark I-V measurements transformed by superposition. By this means, the power of the degrading module can be semi-continuously determined so that statistical data for multiple modules undergoing potential-induced degradation can be easily and accurately obtained.
  • Keywords
    elemental semiconductors; failure analysis; life testing; probability; silicon; sodium; solar cells; statistical analysis; Si; accelerated lifetime test data; acceleration factor determination; chamber testing; constant relative humidity; crystalline silicon PV modules; dark I-V measurements; electron volt energy 0.73 eV; environmental chamber; failure mechanism; initial module power; lognormal analysis; module failure probability; module power in-situ estimation; negative-voltage arrays; p-type silicon-based photovoltaic solar cell modules; potential-induced degradation; statistical data; Acceleration; Degradation; Life estimation; Photovoltaic systems; Stress; Temperature measurement; Testing; Current-voltage characteristics; Degradation; High-voltage techniques; Photovoltaic cells; Photovoltaic systems; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532009
  • Filename
    6532009