Title :
Fault localization and failure modes in microsystems-enabled photovoltaic devices
Author :
Yang, Benjamin B. ; Cruz-Campa, Jose Luis ; Haase, Gaddi S. ; Tangyunyong, Paiboon ; Cole, Edward I. ; Pimentel, A.A. ; Resnick, P.J. ; Okandan, Murat ; Nielson, Gregory N.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Microsystems-enabled photovoltaic (MEPV) technology is a promising approach to lower the cost of solar energy to competitive levels. This paper describes current development efforts to leverage existing silicon integrated circuit (IC) failure analysis (FA) techniques to study MEPV devices. Various FA techniques such as light emission microscopy and laser-based fault localization were used to identify and characterize primary failure modes after fabrication and packaging. The FA results provide crucial information used in provide corrective actions and improve existing MEPV fabrication techniques.
Keywords :
elemental semiconductors; failure analysis; fault diagnosis; integrated circuit packaging; integrated circuit reliability; microfabrication; micromechanical devices; monolithic integrated circuits; photovoltaic cells; silicon; solar cells; FA; IC; MEPV fabrication technique; Si; failure analysis technique; laser-based fault localization; light emission microscopy; microsystems-enabled photovoltaic device; packaging; primary failure mode identification; silicon integrated circuit; solar energy cost; Arrays; Failure analysis; Metals; Photovoltaic systems; Silicon; Substrates; failure analysis; microsystems-enabled photovoltaics; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532010
