Title :
Intrinsic transistor reliability improvements from 22nm tri-gate technology
Author :
Ramey, S. ; Ashutosh, A. ; Auth, C. ; Clifford, J. ; Hattendorf, M. ; Hicks, J. ; James, Rob ; Rahman, Aminur ; Sharma, Vishal ; St.Amour, A. ; Wiegand, C.
Author_Institution :
Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
Abstract :
This paper highlights the intrinsic reliability capabilities of Intel´s 22nm process technology, which introduced the tri-gate transistor architecture and features a 3rd generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including BTI, TDDB, SILC, and HCI. In addition, characteristics unique to this transistor architecture and process technology are described.
Keywords :
high-k dielectric thin films; semiconductor device reliability; transistors; 3rd generation high-κ-metal-gate process; BTI; HCI; Intel process technology; SILC; TDDB; intrinsic transistor reliability improvements; process technology; size 22 nm; transistor architecture; trigate technology; Degradation; Integrated circuit reliability; Logic gates; MOS devices; Optimization; Transistors; BTI; FinFET; HCI; TDDB; reliability; tri-gate;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532017
