Title :
Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology
Author :
Sarafianos, A. ; Gagliano, O. ; Serradeil, V. ; Lisart, M. ; Dutertre, J.-M. ; Tria, Assia
Author_Institution :
STMicroelectron., Rousset, France
Abstract :
This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.
Keywords :
MOSFET; measurement by laser beam; semiconductor device measurement; semiconductor device models; NMOS transistor; NPN parasitic bipolar drain-psubstrate-source; electrical model; laser power; pulsed photoelectric laser stimulation; size 90 nm; Junctions; Laser modes; MOSFET; Measurement by laser beam; Photoconductivity; Power lasers; Semiconductor lasers; 1064nm wavelength; NMOS transistor; parasitic bipolar transistor; pulsed PLS;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532028
