DocumentCode :
608217
Title :
Self-heat reliability considerations on Intel´s 22nm Tri-Gate technology
Author :
Prasad, C. ; Jiang, L. ; Singh, D. ; Agostinelli, M. ; Auth, C. ; Bai, P. ; Eiles, T. ; Hicks, J. ; Jan, C.H. ; Mistry, Khyati ; Natarajan, Sriraam ; Niu, Ben ; Packan, P. ; Pantuso, D. ; Post, I. ; Ramey, S. ; Schmitz, A. ; Sell, B. ; Suthram, S. ; Thoma
Author_Institution :
Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
fYear :
2013
fDate :
14-18 April 2013
Abstract :
This paper describes various measurements on self-heat performed on Intel´s 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.
Keywords :
semiconductor device reliability; transistors; Intel process technology; self-heat reliability considerations; size 22 nm; thermal modeling; tri-gate transistor architecture; Heating; Logic gates; MOS devices; Temperature measurement; Temperature sensors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532036
Filename :
6532036
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=608217
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