DocumentCode
608217
Title
Self-heat reliability considerations on Intel´s 22nm Tri-Gate technology
Author
Prasad, C. ; Jiang, L. ; Singh, D. ; Agostinelli, M. ; Auth, C. ; Bai, P. ; Eiles, T. ; Hicks, J. ; Jan, C.H. ; Mistry, Khyati ; Natarajan, Sriraam ; Niu, Ben ; Packan, P. ; Pantuso, D. ; Post, I. ; Ramey, S. ; Schmitz, A. ; Sell, B. ; Suthram, S. ; Thoma
Author_Institution
Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
fYear
2013
fDate
14-18 April 2013
Abstract
This paper describes various measurements on self-heat performed on Intel´s 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.
Keywords
semiconductor device reliability; transistors; Intel process technology; self-heat reliability considerations; size 22 nm; thermal modeling; tri-gate transistor architecture; Heating; Logic gates; MOS devices; Temperature measurement; Temperature sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532036
Filename
6532036
Link To Document