Title :
Bias temperature instability and hot carrier circuit ageing simulations specificities in UTBB FDSOI 28nm node
Author :
Angot, D. ; Huard, Vincent ; Federspiel, Xavier ; Cacho, F. ; Bravaix, A.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
We present new reliability features related to the use of a wide range of bulk back biasing in advanced UTBB FDSOI devices. NBTI and HCI stresses were done addressing degradation dependencies vs. bulk bias with the help of TCAD simulations in order to validate our new proposed NBTI physical model in UTBB FDSOI CMOS node.
Keywords :
CMOS integrated circuits; circuit simulation; elemental semiconductors; integrated circuit design; integrated circuit modelling; integrated circuit reliability; silicon; silicon-on-insulator; stress analysis; technology CAD (electronics); thin film circuits; HCI stress; NBTI; Si; TCAD simulation; advanced UTBB FDSOI CMOS device node; bias temperature instability; bulk back biasing; hot carrier circuit ageing simulation; reliability; thin film device; ultrathin body and buried oxide; Degradation; Human computer interaction; Integrated circuit modeling; Integrated circuit reliability; Semiconductor device modeling; Stress; Bias Temperature damage; Hot-Carrier; TCAD simulations; UTBB FDSOI; ring oscillators;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532037
