Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon

Author

Ghoneim, Mohamed T. ; Rojas, Jhonathan P. ; Young, Chadwin D. ; Bersuker, Gennadi ; Hussain, Muhammad M.

Author_Institution

Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia

Volume

64

Issue

2

fYear

2015

fDate

Jun-15

Firstpage

579

Lastpage

585

Abstract

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer.

Keywords

CMOS integrated circuits; MOS capacitors; elemental semiconductors; permittivity; semiconductor device breakdown; silicon; statistical analysis; CMOS compatible process; MOSCAP; bulk mono-crystalline silicon substrate; dielectric breakdown; dielectric constant insulator; electrical analysis; flexible bulk mono-crystalline silicon; lifetime projection; metal gate metal oxide semiconductor capacitors; ramping voltage breakdown; silicon wafer; size 25 mum; statistical analysis; Capacitance; Capacitance-voltage characteristics; Fabrics; Metals; Silicon; Stress; Voltage measurement; Flexible; Weibull distribution; lifetime projection; metal oxide semiconductor capacitors; time dependent dielectric breakdown; voltage breakdown;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/TR.2014.2371054

Filename

6967871