Title :
Wafer-level MEMS package and its reliability issues
Author :
Tanaka, Shoji ; Esashi, Masayoshi
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
This paper reviews wafer-level hermetic packaging technology using anodic bonding from several reliability points of view. First, reliability risk factors of high temperature, high voltage and electrochemical O2 generation during anodic bonding are discussed. Next, electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed. The reliability of both hermetic sealing and electrical feedthrough must be simultaneously satisfied. A new wafer-level MEMS packaging material, anodically-bondable low temperature cofired ceramic (LTCC) wafer, is introduced, and its reliability data on hermetic sealing, electrical interconnection and flip-chip mounting on a printed circuit board (PCB) are described.
Keywords :
anodisation; ceramic packaging; electrochemical analysis; flip-chip devices; hermetic seals; integrated circuit interconnections; integrated circuit reliability; micromechanical devices; printed circuit interconnections; wafer bonding; wafer level packaging; LTCC; PCB; anodically-bondable low temperature cofired ceramic wafer; electrical feedthrough; electrical interconnection; electrochemical generation; flip-chip mounting; hermetic sealing; printed circuit board; reliability risk factor; wafer-level MEMS packaging material; wafer-level hermetic packaging technology; Bonding; Cavity resonators; Glass; Micromechanical devices; Packaging; Semiconductor device reliability; Anodic bonding; Electrical feedthrough; Low temperature cofired ceramics (LTCC); Micro electro mechanical systems (MEMS); Wafer-level packaging;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532047
