Title :
Impact of parasitic bipolar action and soft-error trend in bulk CMOS at terrestrial environment
Author :
Uemura, Toshifumi ; Kato, Toshihiko ; Matsuyama, Hiroki
Author_Institution :
Fujitsu Semicond. Ltd., Tokyo, Japan
Abstract :
We investigate an impact of parasitic bipolar action on 28nm sequential elements in the terrestrial environment through spallation neutron beam irradiation tests. We discuss the contribution of parasitic bipolar action to the technology trend of SER through neutron tests on Flip-Flops and SRAMs.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; flip-flops; integrated circuit testing; logic testing; neutron beams; radiation hardening (electronics); SER technology; SRAM; bulk CMOS; flip-flops; parasitic bipolar action; parasitic bipolar action contribution; sequential elements; soft-error trend; spallation neutron beam irradiation tests; terrestrial environment; Latches; Layout; Market research; Neutrons; Particle beams; Radiation effects; Random access memory; Alpha; Flip-Flop; Latch; Neutron; Sequential element; Single event upset; parasitic bipolar action;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532054
