Single image spectral electroluminescence (photon emission) of GaN HEMTs

Author

Scholz, P. ; Glowacki, A. ; Kerst, U. ; Boit, Christian ; Ivo, P. ; Lossy, R. ; Wurfl, H.-J. ; Yokoyama, Yoshisato

Author_Institution

TUB Berlin Univ. of Technol., Berlin, Germany

fYear

2013

fDate

14-18 April 2013

Abstract

Continuous spectra of GaN HEMT photon emission were detected with prism-based optical path. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail. Therefore, multi-finger HEMTs require FIB inactivation of excess fingers to ensure single finger operation. The extracted parameter is electron temperature correlated to kinetic energy of the 2DEG electrons. It is field-related and scales with gate voltage, in agreement with device simulation. No spectral peaks were detected.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; high electron mobility transistors; image processing; wide band gap semiconductors; 2DEG electrons; FIB inactivation; GaN; device simulation; electron temperature; emission spot expansion; gate voltage; kinetic energy; multifinger HEMT; photon emission; prism-based optical path; single finger operation; single image spectral electroluminescence; spectral tail; Fingers; Gallium nitride; HEMTs; Logic gates; MODFETs; Optical imaging; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532060

Filename

6532060