Title :
Single image spectral electroluminescence (photon emission) of GaN HEMTs
Author :
Scholz, P. ; Glowacki, A. ; Kerst, U. ; Boit, Christian ; Ivo, P. ; Lossy, R. ; Wurfl, H.-J. ; Yokoyama, Yoshisato
Author_Institution :
TUB Berlin Univ. of Technol., Berlin, Germany
Abstract :
Continuous spectra of GaN HEMT photon emission were detected with prism-based optical path. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail. Therefore, multi-finger HEMTs require FIB inactivation of excess fingers to ensure single finger operation. The extracted parameter is electron temperature correlated to kinetic energy of the 2DEG electrons. It is field-related and scales with gate voltage, in agreement with device simulation. No spectral peaks were detected.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; high electron mobility transistors; image processing; wide band gap semiconductors; 2DEG electrons; FIB inactivation; GaN; device simulation; electron temperature; emission spot expansion; gate voltage; kinetic energy; multifinger HEMT; photon emission; prism-based optical path; single finger operation; single image spectral electroluminescence; spectral tail; Fingers; Gallium nitride; HEMTs; Logic gates; MODFETs; Optical imaging; Photonics;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532060
