DocumentCode
608256
Title
Bias Temperature Stress (BTS) induced ESD device´s leakage issue and Its preventing solutions in smart power technology
Author
Chien-Fu Huang ; Yi-Feng Chang ; Shui-Ming Cheng ; Ming-Hsiang Song
Author_Institution
TSMC, Hsinchu, Taiwan
fYear
2013
fDate
14-18 April 2013
Abstract
A leakage issue induced by Bias Temperature Stress (BTS) is found in a NPN-based ESD clamp. BTS (1.1*Vdd, 125C, 8hrs) can cause an accumulation of drifted ions at an/the STI interface which leads to increased leakage and eventual device failure. TCAD simulation and activation energy extraction model are used to explain the mechanism and two solutions are proposed.
Keywords
circuit simulation; clamps; electrostatic discharge; integrated circuit design; integrated circuit modelling; leakage currents; power integrated circuits; stress analysis; technology CAD (electronics); BTS; ESD device leakage current issue; NPN-based ESD clamp; STI interface; TCAD simulation; activation energy extraction model; bias temperature stress; device failure; ion drifting accumulation; smart power technology; temperature 125 C; time 8 hour; voltage 1.1 V; Breakdown voltage; Clamps; Electric fields; Electrostatic discharges; Ions; Leakage currents; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532075
Filename
6532075
Link To Document