Title :
Bias Temperature Stress (BTS) induced ESD device´s leakage issue and Its preventing solutions in smart power technology
Author :
Chien-Fu Huang ; Yi-Feng Chang ; Shui-Ming Cheng ; Ming-Hsiang Song
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
A leakage issue induced by Bias Temperature Stress (BTS) is found in a NPN-based ESD clamp. BTS (1.1*Vdd, 125C, 8hrs) can cause an accumulation of drifted ions at an/the STI interface which leads to increased leakage and eventual device failure. TCAD simulation and activation energy extraction model are used to explain the mechanism and two solutions are proposed.
Keywords :
circuit simulation; clamps; electrostatic discharge; integrated circuit design; integrated circuit modelling; leakage currents; power integrated circuits; stress analysis; technology CAD (electronics); BTS; ESD device leakage current issue; NPN-based ESD clamp; STI interface; TCAD simulation; activation energy extraction model; bias temperature stress; device failure; ion drifting accumulation; smart power technology; temperature 125 C; time 8 hour; voltage 1.1 V; Breakdown voltage; Clamps; Electric fields; Electrostatic discharges; Ions; Leakage currents; Stress;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532075
