Title :
Electromigration in advanced Bond Pad structures
Author_Institution :
CMOS Dev. Reliability, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.
Keywords :
copper; electromigration; BP EM model; BP electromigration; VIATOP; VT dimensions; advanced bond pad structures; advanced technology nodes; aluminum via; bond pad electromigration; current crowding-reservoir effect; maximum chip-scaling; scaling effect; top copper level; Aluminum; Current density; Electromigration; Mathematical model; Proximity effects; Reservoirs; Shape; Bond Pad EM; Bond Pad Electromigration; Electromigration;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532077
