DocumentCode
608258
Title
Electromigration in advanced Bond Pad structures
Author
Ki-Don Lee
Author_Institution
CMOS Dev. Reliability, Texas Instrum. Inc., Dallas, TX, USA
fYear
2013
fDate
14-18 April 2013
Abstract
VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.
Keywords
copper; electromigration; BP EM model; BP electromigration; VIATOP; VT dimensions; advanced bond pad structures; advanced technology nodes; aluminum via; bond pad electromigration; current crowding-reservoir effect; maximum chip-scaling; scaling effect; top copper level; Aluminum; Current density; Electromigration; Mathematical model; Proximity effects; Reservoirs; Shape; Bond Pad EM; Bond Pad Electromigration; Electromigration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532077
Filename
6532077
Link To Document