Title :
memFET: From gate dielectric breakdown to system reconfigurability
Author :
Martin-Martinez, J. ; Crespo-Yepes, A. ; Rodriguez, Roberto ; Nafria, M. ; Almudever, C.G. ; Rubio, Albert
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
Abstract :
In this paper, a new device concept, called hereafter memFET, is presented. The memFET exploits in MOSFETs the reversibility property of the dielectric breakdown (BD) in some materials, so that the potential device functionality is enlarged when compared to MIS/MIM structures. The memFET can be used to implement logic functions and memory blocks into a crossbar structure, allowing the dynamic logic configuration of the crossbar, opening paths to new adaptive computing hardware and fault-tolerant systems.
Keywords :
MOSFET; electric breakdown; fault tolerance; MOSFET; adaptive computing hardware; crossbar structure; dynamic logic configuration; fault-tolerant systems; gate dielectric breakdown; logic functions; memFET; memory blocks; potential device functionality; reversibility property; system reconfigurability; Current measurement; Dielectrics; Integrated circuit modeling; Logic gates; MOSFET; Switches; Voltage control; CMOS; Resistive switching; adaptive computing; crossbar; dielectric breakdown; non-volatile memories;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532082
