memFET: From gate dielectric breakdown to system reconfigurability

Author

Martin-Martinez, J. ; Crespo-Yepes, A. ; Rodriguez, Roberto ; Nafria, M. ; Almudever, C.G. ; Rubio, Albert

Author_Institution

Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain

fYear

2013

fDate

14-18 April 2013

Abstract

In this paper, a new device concept, called hereafter memFET, is presented. The memFET exploits in MOSFETs the reversibility property of the dielectric breakdown (BD) in some materials, so that the potential device functionality is enlarged when compared to MIS/MIM structures. The memFET can be used to implement logic functions and memory blocks into a crossbar structure, allowing the dynamic logic configuration of the crossbar, opening paths to new adaptive computing hardware and fault-tolerant systems.

Keywords

MOSFET; electric breakdown; fault tolerance; MOSFET; adaptive computing hardware; crossbar structure; dynamic logic configuration; fault-tolerant systems; gate dielectric breakdown; logic functions; memFET; memory blocks; potential device functionality; reversibility property; system reconfigurability; Current measurement; Dielectrics; Integrated circuit modeling; Logic gates; MOSFET; Switches; Voltage control; CMOS; Resistive switching; adaptive computing; crossbar; dielectric breakdown; non-volatile memories;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532082

Filename

6532082