Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Author

Min-Cheng Chen ; Hsiao-Chien Chen ; Ta-Hsien Lee ; Yu-Hsien Lin ; Jyun-Hung Shih ; Bo-Wei Wang ; Yun-Fang Hou ; Yi-Ju Chen ; Chia-Yi Lin ; Chang-Hsien Lin ; Yi-Ping Hsieh ; ChiaHua Ho ; Mu-Yi Hua ; Jian-Tai Qiu ; Tahui Wang ; Fu-Liang Yang

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

2013

fDate

14-18 April 2013

Abstract

This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (V_th shift > 60 mV/10^-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.

Keywords

electrochemical electrodes; elemental semiconductors; nanosensors; nanowires; silicon; Si; Si nanowire sensor; bottom gate nanowire sensors; charge-sensitive slope; charging electrode; detection stability; forcing electrode; size 35 nm; stability estimation method; surface charge coupling effect; wire-width scaling; Electrodes; Logic gates; Nanobioscience; Nanoscale devices; Sensors; Silicon; Surface treatment; Charge coupling effect; dection stability; nanosensor fabrication; nanowire FET; semiconductive sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532089

Filename

6532089